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Same model may have multiple batches, images only for reference.
RSS075P03TB1 Real Image
Same model may have multiple batches, images only for reference.

RSS075P03TB1

Part No RSS075P03TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.5A 8SOP / P-Channel 30 V 7.5A (Ta) 2W (Ta) Surface Mount 8-SOP
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 892434-RSS075P03TB1
Ultra Librarian 3D Model Ultra Librarian RSS075P03TB1 CAD Model

Description

The RSS075P03TB1 is a P-Channel MOSFET transistor with a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.5A.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 7.5A
  • Maximum On-Resistance (Rds On): 21mOhm @ 7.5A and 10V gate-source voltage
  • Gate Threshold Voltage (Vgs(th)): 2.5V
  • Power Dissipation: 2W (Ta)
  • Mounting: surface mountable
  • Package: 8-SOIC (0.154", 3.90mm Width) package
  • Supplied in: tape and reel format
  • Manufacturer: Rohm Semiconductor
  • Status: now obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7117 $58.5585
13+ $9.6096 $124.9248
19+ $9.3093 $176.8767
26+ $9.0090 $234.2340
34+ $8.7087 $296.0958
45+ $7.8078 $351.3510
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