The RSS120N03TB MOSFET from Rohm Semiconductor is a great choice for your discrete semiconductor needs.

• Polarity: N-channel
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current @ 25°C: 12A (Ta)
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Maximum Rds On @ Id,Vgs: 10 mOhm @ 12A, 10V
• Maximum Gate Charge: 25nC @ 5V
• Maximum Input Capacitance: 1360pF @ 10V
• Power Dissipation (max): 2W (Ta)
• Temperature Range: 150°C (TJ)
• Case/Package: 8-SOP
• Dimension: 8-SOIC (0.154", 3.90mm Width)
• Technology: MOSFET
• Compliance: RoHS compliant
• ECCN: EAR99