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Same model may have multiple batches, images only for reference.
RSS125N03FU6TB Real Image
Same model may have multiple batches, images only for reference.

RSS125N03FU6TB

Part No RSS125N03FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.5A 8SOIC
Datasheet
RSS125N03FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 28nC @ 5V
Max Input Capacitance 1670pF @ 10V
Maximum Gate-Source Voltage 20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1092812-RSS125N03FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSS125N03FU6TB CAD Model

Description

The supply and demand status is balanced.

  • Component Type: MOSFET
  • Polarity: N-channel
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Intended Use: discrete semiconductor products
  • Win Source Part Number: 1092812

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97+ $2.9995 $290.9515
129+ $2.6900 $347.0100
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Availability: 15,000 pieces
MOQ: 15 pcs
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