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Same model may have multiple batches, images only for reference.
RT1A045APTCR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RT1A045APTCR

Part No RT1A045APTCR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4.5A TSST8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 40nC @ 4.5V
Max Input Capacitance 4200pF @ 6V
Maximum Gate-Source Voltage -8V
Power Dissipation (Max) 650mW (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 4.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSST
Dimension 8-SMD, Flat Lead
Win Source Part Number 1092851-RT1A045APTCR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian RT1A045APTCR CAD Model

Description

The RT1A045APTCR manufactured by Rohm Semiconductor is a MOSFET discrete semiconductor product with a P-channel polarity.

  • Packaging: Reel
  • Power Dissipation (Max): 650mW (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 40nC @ 4.5V
  • Maximum Input Capacitance: 4200pF @ 6V
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V
  • Operating Temperature Range: 150°C (TJ)
  • Mounting: SMD (SMT)
  • Package Type: 8-TSST
  • Quantity per Package: 3k pcs

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