The RU1C002UNTCL is an N-Channel MOSFET manufactured by Rohm Semiconductor.

• Power Dissipation: It has a power dissipation of 150mW @ Ta and a maximum drain-source breakdown voltage of 20V.
• Drain Current: The continuous drain current @ 25°C is 200mA (Ta) and the gate-source threshold voltage is 1V @ 1mA.
• Input Capacitance: The RU1C002UNTCL has a maximum input capacitance of 25pF @ 10V and a maximum gate-source voltage of ±8V.
• Case/Package: It comes in a UMT3F case/package with a dimension of SC-85.
• Supply and Demand: The supply and demand status of this product is limited.