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RU1C002ZPTCL

Part No RU1C002ZPTCL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.2A UMT3F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Gate Charge 1.4nC @ 4.5V
Max Input Capacitance 115pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT3F
Dimension SC-85
Win Source Part Number 1093064-RU1C002ZPTCL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RU1C002ZPTCL CAD Model

Description

The Rohm Semiconductor RU1C002ZPTCL is a P-channel MOSFET with a maximum drain-source breakdown voltage of 20V.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 200mA
  • Maximum Power Dissipation: 150mW (Ta)
  • Maximum Rds On @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
  • Package: UMT3F
  • Mounting: Surface-Mountable
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Max Gate Charge: 1.4nC @ 4.5V
  • Maximum Gate-Source Voltage: ±10V
  • Technology: MOSFET
  • Product Status: Active
  • Temperature Range: 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,060+ $0.0472 $50.0320
2,265+ $0.0442 $100.1130
3,515+ $0.0427 $150.0905
5,030+ $0.0398 $200.1940
6,530+ $0.0383 $250.0990
8,155+ $0.0368 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 394,912 pieces
MOQ: 1060 pcs
Order Increment : 1 pcs
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