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RUM003N02T2L

Part No RUM003N02T2L
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 300MA VMT3 / Trans MOSFET N-CH Si 20V 0.3A Automotive 3-Pin VMT T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 25pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 300mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VMT3
Dimension SOT-723
Win Source Part Number 027652-RUM003N02T2L
Popularity Medium
Supply and Demand Status Sufficient
Family Name RUM003N02
Introduction Date December 04, 2007
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RUM003N02T2L CAD Model

Description

The RUM003N02T2L is an N-channel MOSFET manufactured by Rohm Semiconductor. It has a maximum power dissipation of 150mW and a continuous drain current of 300mA.

  • Package: Housed in a VMT3 package
  • Popularity: Has a low popularity in the market with a sufficient supply and demand status
  • Suitable for: Use in various electronic applications that require switching and amplification of signals

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Pricing & Ordering

Quantity Unit Price Ext. Price
995+ $0.0504 $50.1480
2,120+ $0.0472 $100.0640
3,290+ $0.0456 $150.0240
4,710+ $0.0425 $200.1750
6,115+ $0.0409 $250.1035
7,635+ $0.0393 $300.0555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 995 pcs
Order Increment : 1 pcs
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