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Same model may have multiple batches, images only for reference.
RW1E014SNT2R Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RW1E014SNT2R

Part No RW1E014SNT2R
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.4A WEMT6
Datasheet
RW1E014SNT2R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 1.4nC @ 5V
Max Input Capacitance 70pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 240 mOhm @ 1.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WEMT
Dimension SOT-563, SOT-666
Win Source Part Number 027662-RW1E014SNT2R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RW1E014SNT2R CAD Model

Description

The Rohm Semiconductor 027662-RW1E014SNT2R is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 700mW @ Ta
  • Continuous Drain Current: 1.4A @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 1.4nC @ 5V
  • Maximum Input Capacitance: 70pF @ 10V
  • Maximum Rds On @ Id,Vgs: 240 mOhm @ 1.4A, 10V
  • Package: 6-WEMT
  • Dimensions: SOT-563 and SOT-666
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1221 $57.9975
1,155+ $0.1003 $115.8465
1,785+ $0.0972 $173.5020
2,460+ $0.0940 $231.2400
3,185+ $0.0908 $289.1980
4,260+ $0.0815 $347.1900
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Availability: 5,200 pieces
MOQ: 475 pcs
Order Increment : 1 pcs
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