The RXH100N03TB1 is a single N-channel MOSFET transistor designed for discrete semiconductor applications.

• Drain to source voltage: 30V
• Continuous drain current: 10A @ 25°C
• Maximum on-resistance: 13mOhm @ 10A and 10V gate-source voltage
• Gate threshold voltage: 2.5V @ 1mA
• Maximum power: 2W @ ambient temperature
• Mountable: surface mountable
• Package: 8-SOIC package with an exposed pad
• Gate charge: 11nC @ 5V gate-source voltage
• Input capacitance: 800pF @ 10V drain-source voltage
• Maximum gate-source voltage: ±20V
• Temperature range: up to 150°C
• Active product: from Rohm Semiconductor