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SCT3080ALGC11

Part No SCT3080ALGC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 650V 30A TO247N / N-Channel 650 V 30A (Tc) 134W (Tc) Through Hole TO-247N
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 571 pF @ 500 V
Power Dissipation (Max) 134W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3080
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1091922-SCT3080ALGC11
Ultra Librarian 3D Model Ultra Librarian SCT3080ALGC11 CAD Model

Description

The Rohm Semiconductor electronic component is a N-Channel SiCFET transistor with a Win Source Part Number of 1091922-SCT3080ALGC11.

  • Drain to source voltage: 650 V
  • Continuous drain current: 30A (Tc)
  • Maximum power dissipation: 134W (Tc)
  • Package: tube
  • Standard package: 30

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.4615 $59.2305
17+ $6.9427 $118.0259
26+ $6.7258 $174.8708
36+ $6.5089 $234.3204
46+ $6.2919 $289.4274
62+ $5.6410 $349.7420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,032 pieces
In Stock: 1,516 pieces Factory Stock: 1,516 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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