The Rohm Semiconductor SCT3120ALGC11 is an N-Channel SiCFET (Silicon Carbide) transistor with a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 21A (Tc).

• Drain to source voltage (Vdss): 650V
• Continuous drain current (Id): 21A (Tc)
• Maximum power dissipation: 103W (Tc)
• Gate charge (Qg): 38nC @ 18V
• Maximum operating temperature: 175°C (TJ)
• RoHS compliant: Yes
• Supply and demand status: short
• Recommendation: Exercise caution and purchase this component from a reliable source to avoid the risk of counterfeit products.