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Same model may have multiple batches, images only for reference.
SH8K52GZETB Real Image
Same model may have multiple batches, images only for reference.

SH8K52GZETB

Part No SH8K52GZETB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SH8K52GZETB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 170mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Power - Max 1.4W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number SH8K52
Other Names SH8K52GZETBDKR,SH8K52GZETBCT,SH8K52GZETBTR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278559-SH8K52GZETB
Ultra Librarian 3D Model Ultra Librarian SH8K52GZETB CAD Model

Description

The SH8K52GZETB from Rohm Semiconductor is an electronic component that is designed to provide high-quality performance.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 3A @ 25°C
  • Rds On: 170mOhm @ 3A and 10V
  • Maximum Vgs(th): 2.5V @ 1mA
  • Maximum Power: 1.4W @ Ta

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6216 $59.0520
230+ $0.5100 $117.3000
355+ $0.4941 $175.4055
485+ $0.4782 $231.9270
625+ $0.4622 $288.8750
840+ $0.4144 $348.0960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,460 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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