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Same model may have multiple batches, images only for reference.
SP8K22 TB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SP8K22 TB

Part No SP8K22 TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 45V 4.5A 8SOIC
Datasheet
SP8K22 TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 45V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 46 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.6nC @ 5V
Max Input Capacitance 550pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 047198-SP8K22 TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8K22 TB CAD Model

Description

The Rohm Semiconductor electronic component is a high-quality FET that is perfect for use in various electronic devices.

  • Supply and Demand Status: balanced
  • Win Source Part Number: 047198-SP8K22 TB
  • Package: reel - TR
  • Mounting: SMD (SMT)
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Power Dissipation (Max): 2W
  • Drain-Source Breakdown Voltage: 45V
  • Continuous Drain Current @ 25°C: 4.5A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Gate-Charge (Max): 9.6nC @ 5V
  • Input Capacitance (Max): 550pF @ 10V
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V

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