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Same model may have multiple batches, images only for reference.
TT8J21TR Real Image
Same model may have multiple batches, images only for reference.

TT8J21TR

Part No TT8J21TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.5A TSST8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.5A
Maximum Rds On at Id,Vgs 68 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 1270pF @ 10V
Maximum Power Dissipation 650mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSST
Win Source Part Number 098615-TT8J21TR
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian TT8J21TR CAD Model

Description

The Rohm Semiconductor TT8J21TR is a dual P-channel FET that is designed for use in logic level gate applications.

  • Type: Dual P-channel FET
  • Application: Logic Level Gate
  • Power Dissipation (Max): 650mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V
  • Package: 8-TSST
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Sufficient
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3493 $50.6485
350+ $0.2866 $100.3100
545+ $0.2777 $151.3465
745+ $0.2687 $200.1815
965+ $0.2598 $250.7070
1,290+ $0.2329 $300.4410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,440 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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