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Same model may have multiple batches, images only for reference.
TT8K2TR Real Image
Same model may have multiple batches, images only for reference.

TT8K2TR

Part No TT8K2TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 2.5A TSST8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.5A
Maximum Rds On at Id,Vgs 90 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 3.2nC @ 4.5V
Max Input Capacitance 180pF @ 10V
Maximum Power Dissipation 1.25W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSST
Win Source Part Number 1114853-TT8K2TR
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian TT8K2TR CAD Model

Description

The 1114853-TT8K2TR is a dual 2 N-channel logic level gate FET type semiconductor device manufactured by Rohm Semiconductor.

  • Device Type: discrete semiconductor
  • Popularity: medium
  • Supply and Demand Status: sufficient
  • Packaging: reel
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.5A
  • Gate-Source Threshold Voltage: 1.5V @ 1mA
  • Maximum Rds On @ Id,Vgs: 90 mOhm @ 2.5A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4525 $58.8250
315+ $0.3712 $116.9280
485+ $0.3597 $174.4545
665+ $0.3481 $231.4865
860+ $0.3365 $289.3900
1,150+ $0.3017 $346.9550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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