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Same model may have multiple batches, images only for reference.
UMH7N Real Image
Same model may have multiple batches, images only for reference.

UMH7N

Part No UMH7N
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.15W UMT6
Datasheet
UMH7N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 048519-UMH7N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian UMH7N CAD Model

Description

The Rohm Semiconductor 048519-UMH7N is a dual NPN pre-biased transistor with no specified frequency transition.

  • Frequency Transition: Not Specified
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 100 @ 1mA and 5V
  • Maximum Power Dissipation: 150mW
  • Mounting: Surface Mount Device (SMD)
  • Package: UMT6 case or package
  • Resistor-Base (R1): 4.7k ohms
  • Resistor-Emitter Base (R2): Not Specified
  • Maximum Vce (sat): 300mV @ 250μA and 5mA
  • Type: Discrete semiconductor product
  • Status: Not for new designs
  • Supply and Demand Status: Limited

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405+ $0.8628 $349.4340
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