The Rohm Semiconductor MOSFET with Schottky Diode (Isolated) FET Feature is a high-performance electronic component that is suitable for use in various electronic devices.

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current at 25°C: 1.5A (Ta)
• Gate-Source Threshold Voltage: 1.5V @ 1mA
• Max Gate Charge: 2.2nC @ 4.5V
• Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V
• Case/Package: TUMT6
• Package: 6-SMD, Flat Leads
• Technology: MOSFET
• Polarity: N-Channel
• Temperature Range: 150°C (TJ)
• Power Dissipation (Max): 1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V