The K4B2G1646Q-BYKO is a 2Gb DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. This memory chip is designed for use in a variety of applications requiring high-speed and high-density memory, such as computers, mobile devices, and embedded systems. It offers improved performance and lower power consumption compared to previous generations of DDR SDRAM.

Applications

• Desktop and laptop computers
• Mobile phones and tablets
• Graphics cards
• Embedded systems
• Networking equipment

Features

• 2Gb (256M x 8) memory density
• DDR3 interface
• Operating frequency up to 800 MHz (1600 Mbps)
• Low power consumption
• 8-bit data bus width
• RoHS compliant

Benefits

• Provides high-speed data access
• Enhances system performance
• Reduces power consumption, extending battery life in mobile devices
• Enables compact and efficient system designs
• Offers reliable data storage and retrieval

Additional Details

The K4B2G1646Q-BYKO operates at a supply voltage of 1.5V. It supports various DDR3 features such as write leveling, read leveling, and dynamic on-die termination (ODT). The chip is available in a FBGA (Fine-Pitch Ball Grid Array) package, which allows for high-density mounting on printed circuit boards. Its advanced architecture and manufacturing process enable high reliability and long-term stability. The memory chip is designed to meet the stringent performance requirements of modern electronic devices, ensuring fast and efficient data processing. It includes internal error correction mechanisms to maintain data integrity. It’s built with Samsung’s advanced semiconductor technology for superior performance and low power operation.