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K4D261638ITC40

Part No K4D261638ITC40
Manufacturer Samsung
Catalog OEM Parts (J - L)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1066665-K4D261638ITC40
Categories OEM Parts(J-L)
Manufacturer Samsung
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian K4D261638ITC40 CAD Model

Description

The Samsung K4D261638ITC40 is a high-performance synchronous dynamic random-access memory (SDRAM) chip designed for demanding applications requiring fast data access and high bandwidth. It is manufactured by Samsung, a leading provider of memory solutions.

Applications

  • High-end PCs and workstations
  • Graphics cards
  • Networking equipment
  • Digital signal processing (DSP) systems
  • Embedded systems

Features

  • Double Data Rate (DDR) architecture: Achieves high data transfer rates by transferring data on both the rising and falling edges of the clock signal.
  • Clock rate: The '40' in the part number might indicate a clock speed relating to 4.0ns cycle time although further data needed to confirm.
  • Capacity: 256Mb (268,435,456 bits) memory.
  • Supply voltage: Operates at a standard voltage level.
  • Package: Available in industry-standard packages for easy integration.

Benefits

  • Increased system performance: DDR architecture allows for faster data transfer rates compared to traditional SDRAM.
  • Reduced power consumption: Optimized design minimizes power dissipation.
  • High reliability: Samsung's manufacturing processes ensure high quality and reliability.
  • Improved system responsiveness: Fast access times enable quicker application loading and execution.

Additional Details

The K4D261638ITC40 is built using Samsung's advanced process technology, ensuring optimal performance and power efficiency. The chip is designed to meet the stringent requirements of modern computing and communication systems, providing a reliable and cost-effective memory solution. Refer to the official Samsung datasheet for detailed specifications, including timing parameters, voltage levels, and thermal characteristics.

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