The Samsung K4N1G164QQ-HC25 is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component. It is designed for use in a variety of applications requiring high bandwidth and low latency memory, such as computing devices and embedded systems.

Applications

• Desktop and laptop computers
• Servers
• Networking equipment
• Graphics cards
• Gaming consoles
• Embedded systems

Features

• DDR3 technology offering high bandwidth and performance
• Capacity of 1Gb (128M x 8)
• Data transfer rates up to 1600 Mbps (HC25 indicates speed grade)
• 8-bit prefetch architecture
• Double data rate architecture: two data transfers per clock cycle
• Differential clock inputs (CK, /CK)
• Command Address entry mask (CKE)
• On-chip termination (ODT)
• Write leveling
• Lead-free and RoHS compliant
• Operating temperature range: 0°C to +95°C

Benefits

• Increased system performance due to high memory bandwidth
• Improved responsiveness and reduced latency
• Enhanced multitasking capabilities
• Higher frame rates in gaming applications
• Stable and reliable operation
• Lower power consumption compared to previous DDR generations

Additional Details

The K4N1G164QQ-HC25 operates at a voltage of 1.5V. It features an 8n-bit prefetch architecture to achieve high-speed operation. The component is available in a FBGA (Fine-pitch Ball Grid Array) package, providing a compact footprint for space-constrained applications. The integrated on-die termination (ODT) improves signal integrity and reduces reflections on the memory bus. Its write leveling feature is important for ensuring data integrity, particularly at high speeds.