The K4S561632E-TC75T00 is a high-speed SDRAM (Synchronous Dynamic Random-Access Memory) manufactured by Samsung. This memory chip is designed for applications that demand rapid data access and storage, contributing to overall system performance and efficiency.

Applications:

• Graphics Cards
• Gaming Consoles
• Networking Equipment
• Set-top Boxes
• Industrial Control Systems

Features:

• Double Data Rate (DDR) architecture for high-speed data transfer
• On-chip DLL (Delay-Locked Loop) for precise timing control
• Burst mode operation for efficient data access
• Auto precharge capability for simplified memory management
• Low power consumption to enhance energy efficiency

Benefits:

• Increased system responsiveness due to fast data retrieval
• Improved data throughput for demanding applications
• Reduced power consumption, contributing to longer battery life in portable devices
• Enhanced stability and reliability in memory operations

Technical Specifications:

While specific technical specifications can vary based on the exact configuration, key parameters generally include:

• Capacity: 256Mb (Megabits)
• Organization: 8M x 4 x 32
• Interface: DDR SDRAM
• Clock Frequency: Up to 133 MHz
• Data Rate: Up to 266 Mbps
• Operating Voltage: 2.5V
• Operating Temperature: -25°C to +85°C

The K4S561632E-TC75T00 is a reliable and efficient memory solution suitable for a range of applications requiring high-speed data processing and storage capabilities.