The Samsung K4T51163QQ-BPE7 is a high-performance DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) component. It's designed for use in a variety of applications requiring high memory bandwidth and efficient data processing. This specific part number indicates a specific configuration and performance grade within Samsung's DDR2 memory offerings.

Applications

• Desktop Computers: Used as main system memory (RAM) to store active data and program code.
• Laptop Computers: Provides memory for portable computing devices.
• Graphics Cards: Acts as video memory (VRAM) for storing textures, frame buffers, and other graphics-related data.
• Gaming Consoles: Used for storing game assets, levels, and game state data.
• Networking Devices: Provides memory for routers, switches, and other network infrastructure equipment.
• Embedded Systems: Can be utilized in specialized embedded applications requiring DDR2 memory.

Features

• DDR2 Technology: Offers higher bandwidth and improved performance compared to DDR SDRAM.
• 512Mb Density: Provides a capacity of 512 Megabits (64MB) of memory.
• Data Rate: Operates at a specific data transfer rate, indicated by the BPE7 suffix (exact speed needs to be confirmed via datasheet, likely 800MHz).
• Double Data Rate: Transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate.
• On-Die Termination (ODT): Improves signal integrity and reduces reflections, allowing for higher operating speeds.
• Differential Clock Inputs: Provides better noise immunity and timing accuracy.
• RoHS Compliant: Complies with the Restriction of Hazardous Substances directive.

Benefits

• Increased System Performance: Provides fast memory access, improving application responsiveness and overall system speed.
• High Bandwidth: Enables efficient data transfer for demanding applications such as gaming and video editing.
• Improved Power Efficiency: DDR2 technology offers better power consumption compared to earlier DDR generations.
• Reliable Operation: Samsung's memory components are known for their reliability and stability.
• Compatibility: Designed to be compatible with systems supporting DDR2 memory.

Additional Details

The K4T51163QQ-BPE7 is typically packaged in a FBGA (Fine-Pitch Ball Grid Array) package for surface mounting onto a printed circuit board. It requires a specific supply voltage, which is typically 1.8V for DDR2 SDRAM. The timing characteristics, such as CAS latency (CL), RAS-to-CAS delay (tRCD), and RAS precharge time (tRP), are crucial for proper operation and must be configured correctly in the system's BIOS or memory controller. The 'BPE7' suffix indicates the speed grade and timing parameters of this specific part. Further details can be found in the official Samsung datasheet for this memory chip.