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SQD3011K

Part No SQD3011K
Manufacturer Sanken
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 984028-SQD3011K
Categories OEM Parts( S )
Manufacturer Sanken
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SQD3011K CAD Model

Description

The SQD3011K is a power MOSFET manufactured by Sanken Electric. It is designed for high-voltage, high-speed switching applications, such as power supplies, inverters, and motor drives. This MOSFET features low on-resistance, avalanche ruggedness, and integrated fast recovery diode, enabling efficient power conversion and improved system reliability.

Applications

  • Switching power supplies
  • Inverters
  • Motor drives
  • DC-DC converters
  • Uninterruptible Power Supplies (UPS)

Features

  • N-channel MOSFET
  • High voltage rating
  • Low on-resistance (RDS(on))
  • Avalanche ruggedness
  • Integrated fast recovery diode (FRD)
  • TO-252 package

Benefits

  • Efficient power conversion due to low RDS(on)
  • Robust performance in high-voltage applications
  • Reduced switching losses due to integrated FRD
  • Improved system reliability with avalanche ruggedness
  • Easy to mount and heatsink with TO-252 package

Additional Details

The SQD3011K is an N-channel enhancement-mode MOSFET. The high voltage rating allows it to be used in applications with significant voltage stress. The low on-resistance minimizes power dissipation during conduction. The avalanche ruggedness indicates its ability to withstand transient overvoltage events without damage. The integrated fast recovery diode provides a path for current during switching transitions, reducing voltage spikes and improving efficiency. The TO-252 package is a surface mount package that allows for efficient heat dissipation. The specific voltage and current ratings, as well as the switching characteristics, are detailed in the manufacturer's datasheet. The operating temperature range is typically -55°C to +150°C. The gate threshold voltage and input capacitance are important parameters for driving the MOSFET. This device is suitable for high-performance power electronics applications requiring efficiency, robustness, and reliability.

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