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Same model may have multiple batches, images only for reference.
2SD1111-AA
Same model may have multiple batches, images only for reference.

2SD1111-AA

Part No 2SD1111-AA
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 50V 0.7A 3NP / Bipolar (BJT) Transistor NPN - Darlington 50 V 700 mA 200MHz 600 mW Through Hole 3-NP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Sanyo
Package Bulk
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 700 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 50mA, 2V
Power - Max 600 mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package 3-NP
MSL Level Vendor Undefined
REACH Status REACH Unaffected
Other Names 2156-2SD1111-AA-600057
Standard Package 1
Win Source Part Number 969298-2SD1111-AA
Ultra Librarian 3D Model Ultra Librarian 2SD1111-AA CAD Model

Description

The Sanyo 2SD1111-AA is an NPN-Darlington bipolar transistor designed for single applications.

  • Maximum Power: 600mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 700mA
  • DC Current Gain (hFE): 5000 @ 50mA, 2V
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Mounting: Through-hole
  • Supply and Demand Status: Balanced

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