The 2SK1920 is an N-channel junction field-effect transistor (JFET) designed for low-noise amplifier applications, particularly in the VHF and UHF bands. Manufactured by SANYO Semiconductor, this transistor is characterized by its high gain and low noise figure, making it suitable for sensitive receiver front-ends and other high-performance RF circuits.

Applications

• VHF/UHF Low Noise Amplifiers
• RF Mixers
• Oscillators
• High-Impedance Input Stages
• Test and Measurement Equipment

Features

• N-Channel JFET
• Low Noise Figure
• High Power Gain
• High Input Impedance
• Excellent Cross Modulation Characteristic

Benefits

• Improved signal-to-noise ratio in VHF/UHF receivers.
• Enhanced signal amplification in RF circuits.
• Minimal loading of the signal source.
• Reduced intermodulation distortion in amplifier circuits.
• Stable and reliable performance.

Technical Specifications

The 2SK1920 JFET has the following key specifications:

• Drain-Source Voltage (VDS): 20 V
• Gate-Source Voltage (VGS): -20 V
• Drain Current (ID): 30 mA
• Gate-Source Cutoff Voltage (VGSOFF): -0.3 to -1.5 V
• Forward Transfer Admittance (Yfs): 10 mS (typical)
• Input Capacitance (Ciss): 3.5 pF (typical)
• Noise Figure (NF): 1.0 dB (typical) at 100 MHz

The low noise figure of the 2SK1920 makes it ideal for use in VHF/UHF receiver front-ends where minimizing noise is critical for optimal performance. Its high power gain enables efficient signal amplification, and its high input impedance minimizes loading effects on the signal source. The excellent cross-modulation characteristic reduces intermodulation distortion, ensuring clean signal reproduction in complex RF environments.