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SI6956DQ-T1

Part No SI6956DQ-T1
Manufacturer Silicon Labs
Catalog HOT - SALES and EOL Components (S)
Sample
Rohs State Need to verify
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Manufacturer Silicon Labs
Win Source Part Number 322543-SI6956DQ-T1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6956DQ-T1 CAD Model

Description

The SI6956DQ-T1 is a P-Channel 20 V (D-S) MOSFET from Silicon Labs. This power MOSFET is designed for high-efficiency power management applications where minimizing conduction and switching losses is critical. Its compact size and advanced trench technology contribute to superior performance in space-constrained applications.

Applications:

  • Load Switching
  • Power Management in Portable Devices
  • DC-DC Conversion
  • Battery Management Systems

Features:

  • Low On-Resistance: Minimizes conduction losses, improving overall efficiency.
  • Low Gate Charge: Reduces switching losses at high frequencies.
  • 20V Drain-Source Voltage: Suitable for various low-voltage applications.
  • TrenchFET® Power MOSFET Technology: Provides excellent switching performance and efficiency.
  • Halogen-Free: Environmentally friendly design.
  • Surface Mount Technology: Facilitates automated assembly and compact design.

Benefits:

  • Improved Efficiency: The low on-resistance and gate charge contribute to higher efficiency in power conversion circuits, reducing heat dissipation and extending battery life in portable devices.
  • Compact Design: The small footprint allows for use in space-constrained applications, enabling smaller and lighter devices.
  • Reliable Performance: The TrenchFET® technology ensures stable and reliable operation under various operating conditions.
  • Simplified Design: Easy to implement in various power management circuits due to its standard pinout and electrical characteristics.

Additional Details:

The SI6956DQ-T1 utilizes an advanced trench MOSFET technology, which allows for a higher cell density and lower on-resistance compared to traditional planar MOSFETs. This results in improved power efficiency and reduced heat generation. The device is available in a PowerPAK® SC-70 package, which offers excellent thermal performance and is optimized for surface mount assembly. The typical on-resistance (RDS(on)) is very low at both VGS = -4.5V and VGS = -2.5V, making it suitable for battery-powered applications where gate drive voltage may be limited. This MOSFET is specifically designed to minimize both conduction and switching losses, making it an excellent choice for high-frequency DC-DC converters and load switching applications in portable devices like smartphones, tablets, and laptops. The part is RoHS compliant.

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