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Same model may have multiple batches, images only for reference.
SI2399DS-T1-BE3
Same model may have multiple batches, images only for reference.

SI2399DS-T1-BE3

Part No SI2399DS-T1-BE3
Manufacturer Siliconix
Catalog Transistors – FETs, MOSFETs – Single
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 835 pF @ 10 V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Ultra Librarian 3D Model Ultra Librarian SI2399DS-T1-BE3 CAD Model

Description

P-CHANNEL 20-V (D-S) MOSFET

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