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SIHB22N60EF-GE3

Part No SIHB22N60EF-GE3
Manufacturer Siliconix
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 600V 19A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 182mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1423 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Ultra Librarian 3D Model Ultra Librarian SIHB22N60EF-GE3 CAD Model

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