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Same model may have multiple batches, images only for reference.
SI7940DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7940DP-T1-E3

Part No SI7940DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 12V 7.6A PPAK SO-8
Datasheet
SI7940DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 7.6A
Maximum Rds On at Id,Vgs 17 mOhm @ 11.8A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 17nC @ 4.5V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 064582-SI7940DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7940DP-T1-E3 CAD Model

Description

This Vishay dual N-channel FET is a high-quality component designed for use in a wide range of applications.

  • Maximum Power Dissipation: 1.4W
  • Gate: Logic level gate
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 7.6A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge @ 4.5V: 17nC
  • Maximum Input Capacitance:
  • Maximum Rds On @ 11.8A, 4.5V: 17 mOhm
  • Package: PowerPAK SO-8 Dual
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $33.6163 $67.2326
5+ $27.5826 $137.9130
7+ $26.7209 $187.0463
9+ $25.8581 $232.7229
12+ $24.9965 $299.9580
16+ $22.4105 $358.5680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,410 pieces
MOQ: 2 pcs
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