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SIR512DP-T1-RE3

Part No SIR512DP-T1-RE3
Manufacturer Siliconix
Catalog Transistors – FETs, MOSFETs – Single
Description N-CHANNEL 100 V (D-S) MOSFET POW
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25.1A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 50 V
Power Dissipation (Max) 6W (Ta), 96.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Ultra Librarian 3D Model Ultra Librarian SIR512DP-T1-RE3 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0527 $51.3175
60+ $1.6843 $101.0580
92+ $1.6316 $150.1072
127+ $1.5790 $200.5330
164+ $1.5264 $250.3296
220+ $1.3685 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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