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Same model may have multiple batches, images only for reference.
MJ11014 Real Image
Same model may have multiple batches, images only for reference.

MJ11014

Part No MJ11014
Manufacturer Solid State Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 90V 30A TO3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Solid State Inc.
Package Bulk
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 30 A
Voltage - Collector Emitter Breakdown (Max) 90 V
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V
Power - Max 200 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 640860-MJ11014
Ultra Librarian 3D Model Ultra Librarian MJ11014 CAD Model

Description

The MJ11014 is an NPN Darlington transistor designed for high power switching applications. It has a maximum power rating of 200W and a maximum collector current of 30A. The voltage breakdown between the collector and emitter is 90V.

  • Transistor Type: NPN Darlington
  • Maximum Power Rating: 200W
  • Maximum Collector Current: 30A
  • Collector-Emitter Voltage: 90V
  • Package: TO-204AA/TO-3
  • Mounting: Through-Hole
  • Vce Saturation: 4V @ 30A
  • DC Current Gain (hFE): 1000 @ 20A and 5V
  • Product Status: Active
  • Packaging: Bulk, 10 pcs

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