MJ11014 Real Image
Same model may have multiple batches, images only for reference.

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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Solid State Inc.
Package Bulk
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 30 A
Voltage - Collector Emitter Breakdown (Max) 90 V
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V
Power - Max 200 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 640860-MJ11014
Ultra Librarian 3D Model Ultra Librarian MJ11014 CAD Model

Description

The MJ11014 is an NPN Darlington transistor designed for high power switching applications. It has a maximum power rating of 200W and a maximum collector current of 30A. The voltage breakdown between the collector and emitter is 90V.

  • Transistor Type: NPN Darlington
  • Maximum Power Rating: 200W
  • Maximum Collector Current: 30A
  • Collector-Emitter Voltage: 90V
  • Package: TO-204AA/TO-3
  • Mounting: Through-Hole
  • Vce Saturation: 4V @ 30A
  • DC Current Gain (hFE): 1000 @ 20A and 5V
  • Product Status: Active
  • Packaging: Bulk, 10 pcs

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