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P12NM60N

Part No P12NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30.5nC @ 10V
Max Input Capacitance 960pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 410 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 060960-P12NM60N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P12NM60N CAD Model

Description

STMicroelectronics P12NM60N Product Overview

The P12NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ series, which is renowned for its excellent energy efficiency and thermal performance. The P12NM60N is designed to cater to a broad range of applications, including switch-mode power supplies, high-efficiency converters, and power management solutions.

Key Features

  • Low Gate Charge: The P12NM60N boasts a low gate charge (Qg), which enhances the overall efficiency of the device by reducing switching losses.
  • High Avalanche Ruggedness: This MOSFET is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliability and robustness in harsh conditions.
  • 100% Avalanche Tested: Each unit undergoes rigorous testing to guarantee optimal performance during repetitive avalanche conditions.
  • Low Threshold Drive: The low threshold voltage ensures that the device can be driven at lower voltages, making it suitable for low-voltage applications.
  • High dv/dt Capability: The P12NM60N can handle high voltage changes over time without degradation, which is critical for power conversion applications.

Applications

The versatility of the P12NM60N allows it to be used in a variety of applications, such as:

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • DC/AC inverters for solar energy systems
  • LED lighting solutions
  • High-efficiency DC/DC converters

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 600V Continuous Drain Current (I<sub>D) 11.4A Power Dissipation (P<sub>D) 125W Operating Temperature Range -55°C to +150°C Package TO-220

With its combination of low on-resistance, high efficiency, and robustness, the P12NM60N from STMicroelectronics stands out as a reliable choice for designers and engineers looking to improve the performance and longevity of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7845 $62.4575
80+ $1.4645 $117.1600
125+ $1.4183 $177.2875
170+ $1.3721 $233.2570
220+ $1.3271 $291.9620
295+ $1.1897 $350.9615
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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