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P8NM60FP

Part No P8NM60FP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8A TO-220FP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 061114-P8NM60FP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P8NM60FP CAD Model

Description

STMicroelectronics P8NM60FP - Power MOSFET

The P8NM60FP is a high-performance Power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its innovative and reliable electronic components. This device is part of STMicroelectronics' MDmesh™ series, which features state-of-the-art vertical process technology to deliver low on-resistance and high switching performance.

The P8NM60FP is designed to handle high power and efficiency requirements with ease. It is typically used in a wide range of applications, including switch-mode power supplies (SMPS), lighting applications, DC-AC inverters for solar systems, and motor control circuits. The MOSFET's robustness and reliability make it an ideal choice for designers looking to enhance system performance while maintaining energy efficiency.

Key Features:

  • Voltage Rating: The device has a drain-source voltage (V<sub>DS) of 600V, making it suitable for high voltage applications.
  • Current Capability: It can handle continuous drain current (I<sub>D) up to 6A, which is ample for various power-intensive tasks.
  • Low On-Resistance: With a typical on-resistance (R<sub>DS(on)) of only 0.85Ω, the P8NM60FP ensures minimal power loss during operation.
  • High-Speed Switching: The fast switching speed of this MOSFET makes it an excellent choice for high-frequency applications.
  • Enhanced Efficiency: The low gate charge (Q<sub>g) and reduced capacitance contribute to the overall high efficiency of power conversion systems.
  • TO-220FP Package: Enclosed in a fully molded TO-220FP package, it offers good thermal performance and is easy to mount on a printed circuit board (PCB).

The P8NM60FP also incorporates advanced protection features, such as a built-in avalanche ruggedness, which safeguards the device from unexpected voltage spikes. This ensures long-term reliability and stability in a variety of operating conditions.

Overall, the STMicroelectronics P8NM60FP Power MOSFET is a superior choice for engineers and designers who require a high-voltage, high-efficiency, and robust power management solution. Its combination of performance, efficiency, and reliability makes it a versatile component in the power electronics domain.

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