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PD85006-E

Part No PD85006-E
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 40V 870MHZ PWRSO-10RF  /  RF Mosfet LDMOS 13.6 V 200 mA 870MHz 17dB 6W 10-PowerSO
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
Transistor Type LDMOS
Frequency 870MHz
Gain 17dB
Voltage - Test 13.6 V
Current Rating (Amps) 2A
Current - Test 200 mA
Power - Output 6W
Voltage - Rated 40 V
Package / Case PowerSO-10 Exposed Bottom Pad
Supplier Device Package 10-PowerSO
Base Product Number PD85006
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-10293-5,PD85006E
Standard Package 50
Win Source Part Number 1225004-PD85006-E
Ultra Librarian 3D Model Ultra Librarian PD85006-E CAD Model

Description

The PD85006-E is a state-of-the-art RF power transistor developed by STMicroelectronics, a leader in semiconductor solutions. This product is part of ST's LDMOS transistor family, designed to deliver high-performance and reliability for a wide range of applications. The PD85006-E is specifically tailored for high-efficiency RF power amplification, particularly in the VHF and UHF frequency ranges.

Key Features

  • High Power Gain: The PD85006-E boasts a high power gain, which is critical for applications requiring efficient signal amplification.
  • Wide Frequency Range: With an operational frequency range from 1 to 500 MHz, this transistor is versatile and suitable for various RF applications.
  • Thermal Performance: The device is designed with excellent thermal stability, ensuring reliable performance even under high-temperature conditions.
  • High Efficiency: The PD85006-E is optimized for high-efficiency operations, making it an energy-saving solution for RF power systems.
  • Durability: Constructed with STMicroelectronics’ robust LDMOS technology, the transistor is durable and can withstand the rigors of demanding applications.

Applications

The PD85006-E is ideal for a range of applications, including but not limited to:

  • Professional Mobile Radio (PMR)
  • RF power amplifiers for FM broadcasting
  • Industrial applications and medical equipment
  • Amateur radio equipment
  • RFID readers and other wireless communication systems

Technical Specifications

The PD85006-E RF power transistor is encapsulated in a plastic package and designed to offer excellent ruggedness. Some of its notable specifications include:

  • Supply Voltage: 12.5 V
  • Output Power: 6 W (minimum)
  • Power Gain: 14 dB (typical)
  • Efficiency: 65% (typical)
  • Load Mismatch Tolerance: 10:1 VSWR

For detailed information, including datasheets, application notes, and additional resources, customers are encouraged to visit STMicroelectronics' official website or contact their sales representatives. The PD85006-E represents STMicroelectronics' commitment to providing advanced semiconductor solutions that meet the evolving needs of the RF industry.

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