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PD85025-E

Part No PD85025-E
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 40V 870MHZ
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 22 Weeks
Features RF Mosfet LDMOS 13.6 V 300 mA 870MHz 17.3dB 10W PowerSO-10RF (Formed Lead)
Manufacturer STMicroelectronics
Package Tube
Package PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Case / Package PowerSO-10RF (Formed Lead)
Family Name PD85025
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-8297-5, PD85025-E-ND, 497-8297-ND, PD85025E, -497-8297-5, 497-8297
Quantity per package 50
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 888822-PD85025-E
Ultra Librarian 3D Model Ultra Librarian PD85025-E CAD Model

Description

The PD85025-E is a state-of-the-art RF power transistor from the renowned semiconductor manufacturer STMicroelectronics. This product is specifically designed to deliver high performance in RF power amplification applications. It is a key component for designers focusing on RF energy applications in the industrial, scientific, and medical (ISM) bands.

Key Features

  • Frequency Range: The PD85025-E is optimized for use in the 2.4 GHz frequency band, making it an ideal choice for applications such as RF heating, wireless charging, and other ISM applications.
  • Output Power: It boasts a high output power capability, typically able to deliver 25 W of continuous wave power, ensuring strong performance for high-demand applications.
  • High Efficiency: With its excellent thermal performance and efficiency, the PD85025-E ensures reduced energy consumption and lower operating temperatures, contributing to the longevity and reliability of the overall system.
  • Durability: Constructed with STMicroelectronics' proven LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, it offers robustness and stability under a wide range of operating conditions.
  • Package: The transistor is housed in a ceramic package that provides outstanding mechanical durability and thermal stability, essential for maintaining performance over time.

Applications

The PD85025-E is particularly suited for RF energy applications, including but not limited to:

  • Industrial heating and welding systems
  • Medical devices such as MRI and diathermy machines
  • Scientific equipment for material research and spectroscopy
  • Wireless power transfer and charging systems

Conclusion

Overall, the PD85025-E RF power transistor from STMicroelectronics represents a blend of performance, efficiency, and reliability. It is an excellent choice for engineers and designers looking to push the boundaries of RF power amplification in their products. With its robust design and versatile application range, the PD85025-E is set to be a cornerstone component in the rapidly evolving field of RF technology.

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