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SCTW100N65G2AG

Part No SCTW100N65G2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3315 pF @ 520 V
Power Dissipation (Max) 420W (Tc)
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
Base Product Number SCTW100
Other Names 497-SCTW100N65G2AG
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278139-SCTW100N65G2AG
Ultra Librarian 3D Model Ultra Librarian SCTW100N65G2AG CAD Model

Description

STMicroelectronics SCTW100N65G2AG Silicon Carbide Power MOSFET

The SCTW100N65G2AG is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This device is designed to meet the efficiency and reliability demands of high-performance power conversion systems. With a voltage rating of 650V and a nominal current of 100A, the SCTW100N65G2AG is well-suited for a variety of applications, including electric vehicles (EVs), solar inverters, and industrial power supplies.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease.
  • Low On-Resistance: The on-resistance (R<sub>DS(on)) is exceptionally low, reducing conduction losses and improving overall system efficiency.
  • High Current Rating: A continuous drain current (I<sub>D) of 100A ensures that the device can manage significant power levels.
  • Fast Switching Speed: The SCTW100N65G2AG offers fast switching performance, which is crucial for reducing switching losses in power conversion systems.
  • High-Temperature Operation: Capable of operating at junction temperatures up to 175°C, making it suitable for harsh environments.
  • Low Gate Charge: The reduced gate charge (Q<sub>g) allows for lower driving power and simpler gate drive designs.

Applications

  • Electric Vehicle (EV) Powertrains
  • Solar Power Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Performance Power Converters
  • Switch Mode Power Supplies (SMPS)

The SCTW100N65G2AG is an example of STMicroelectronics' commitment to providing advanced technology that pushes the boundaries of power conversion efficiency and reliability. The use of Silicon Carbide in power devices marks a significant step forward in semiconductor technology, offering superior performance characteristics compared to traditional silicon devices. This MOSFET is an ideal choice for designers looking to enhance system performance while reducing energy consumption and heat dissipation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $53.8433 $53.8433
3+ $44.1792 $132.5376
4+ $42.7986 $171.1944
5+ $41.4180 $207.0900
7+ $40.0374 $280.2618
9+ $35.8956 $323.0604
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
Order Increment : 1 pcs
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