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STB11NM60FDT4

Part No STB11NM60FDT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.5A, 10V
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 111957-STB11NM60FDT4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB11NM60FDT4 CAD Model

Description

STB11NM60FDT4 - High-Performance N-Channel MOSFET by STMicroelectronics

The STB11NM60FDT4 is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver high-efficiency power conversion in various applications, including switch-mode power supplies, motor control, and power management tasks. It is well-suited for high-performance applications that require low on-resistance, high switching speed, and superior thermal performance.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The STB11NM60FDT4 boasts an exceptionally low drain-source on-resistance, resulting in reduced conduction losses and improved overall efficiency in power conversion circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency power switching applications, ensuring minimal switching losses and better performance in power regulation tasks.
  • Improved Gate Charge: The optimized gate charge of the STB11NM60FDT4 allows for reduced switching times, which contributes to the efficiency of the device in high-speed switch-mode applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in applications where the device may be subjected to high-energy pulses.
  • High dv/dt Capability: The MOSFET is designed to withstand high voltage changes per unit time (dv/dt), making it suitable for applications with rapid voltage transitions.

Applications

  • Switch-mode power supplies (SMPS)
  • DC/DC converters
  • Power inverters
  • Motor control systems
  • Power management circuits

The STB11NM60FDT4 is housed in a TO-220 package, which is widely used in commercial and industrial applications due to its robustness and excellent thermal properties. The device is also RoHS compliant and compatible with lead-free soldering processes, reflecting STMicroelectronics' commitment to environmental sustainability.

With its combination of high efficiency, fast switching, and rugged design, the STB11NM60FDT4 is a perfect choice for designers looking to optimize their power conversion systems. Its performance and reliability are in line with the quality standards expected from STMicroelectronics, a company with a reputation for excellence in the field of power semiconductor devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.2942 $50.4724
54+ $1.8824 $101.6496
83+ $1.8236 $151.3588
114+ $1.7647 $201.1758
147+ $1.7059 $250.7673
197+ $1.5294 $301.2918
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,850 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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