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STB11NM60N

Part No STB11NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 850pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 066271-STB11NM60N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB11NM60N CAD Model

Description

The STB11NM60N is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed for high-efficiency power management and conversion. It is a part of the MDmesh™ II Plus™ series, which is renowned for its outstanding performance in terms of power density, switching speed, and reliability. This device is tailored for applications requiring high voltage capabilities, such as switch-mode power supplies (SMPS), lighting applications, high-efficiency converters, and power factor correction circuits.

With a voltage rating of 600 V, the STB11NM60N is engineered to handle significant power and stress, making it an ideal choice for both industrial and consumer electronics. Its low on-resistance of just 0.38 Ω typ. ensures minimal conduction losses, which translates to enhanced energy efficiency and thermal performance in your applications.

The MOSFET's low gate charge (Qg) is a testament to its optimized design for fast switching applications. It enables the device to switch on and off rapidly, thus reducing switching losses and improving the overall efficiency of the power conversion process. This feature, combined with the device's high current rating of 11 A, makes it suitable for high-frequency operations and resonant topologies.

STB11NM60N comes in a robust and compact D2PAK package, which not only offers excellent power dissipation but also ensures a smaller footprint on the PCB, providing more room for other components or enabling more compact designs. The package is also designed for ease of mounting and soldering, which can help reduce manufacturing time and costs.

Key Features:

  • N-channel, 600 V, 0.38 Ω typ., 11 A
  • MDmesh™ II Plus™ technology for very low on-resistance
  • Low gate charge and input capacitance
  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • High-frequency operation
  • D2PAK package for better thermal performance

Overall, the STB11NM60N from STMicroelectronics is a powerful and efficient solution for designers looking to improve the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.9861 $59.9583
8+ $16.3998 $131.1984
11+ $15.8870 $174.7570
16+ $15.3742 $245.9872
20+ $14.8625 $297.2500
27+ $13.3241 $359.7507
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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