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STB11NM60T4

Part No STB11NM60T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031060-STB11NM60T4
Family Name STB11NM60
Introduction Date May 19, 2003
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB11NM60T4 CAD Model

Description

Introducing the STB11NM60T4 MOSFET from STMicroelectronics

STMicroelectronics, a global semiconductor leader, presents the STB11NM60T4, a high-performance N-channel Power MOSFET designed to meet the rigorous demands of today's electronic applications. This cutting-edge device is part of STMicroelectronics' MDmesh™ IV series, which is renowned for its outstanding efficiency and thermal performance.

Key Features

  • Advanced MDmesh™ IV Technology: The STB11NM60T4 utilizes ST's innovative MDmesh IV technology, which provides reduced on-resistance, lower gate charge, and superior switching performance.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, this MOSFET is well-suited for high voltage applications, ensuring robust operation even under stress.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of only 0.38 ohms, which translates to improved efficiency and reduced power losses in your circuits.
  • Fast Switching Speed: Fast switching characteristics make the STB11NM60T4 ideal for high-frequency power switching applications.
  • High Current Rating: A continuous drain current (I<sub>D) of 11A ensures that the MOSFET can handle significant power without overheating, making it reliable for demanding tasks.

Applications

The STB11NM60T4 is versatile and can be used in a wide array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • High Efficiency DC-DC Converters
  • Motor Control Systems
  • Power Management Circuits

Package and Reliability

Encased in a TO-220AB package, the STB11NM60T4 is designed for easy integration into various circuit designs. Its robust package ensures that it can withstand harsh operating conditions and provides excellent heat dissipation for reliable long-term performance.

Environmental and Quality Standards

Committed to environmental responsibility, STMicroelectronics ensures that the STB11NM60T4 complies with RoHS directives and is free from harmful substances. The device is also manufactured to meet the highest quality standards, guaranteeing reliability and performance consistency.

With its advanced features and proven technology, the STB11NM60T4 from STMicroelectronics represents a superior choice for designers seeking efficiency, power, and reliability in their power management and conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 990 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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