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STB120N4F6

Part No STB120N4F6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 3850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102759-STB120N4F6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STB120N4F6
Introduction Date February 09, 2010
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian STB120N4F6 CAD Model

Description

STB120N4F6 - STMicroelectronics N-Channel MOSFET

The STB120N4F6 is a high-performance N-Channel MOSFET from the renowned semiconductor manufacturer STMicroelectronics. This device is designed to deliver the efficiency and power handling capabilities required for a wide range of applications, from power supplies to motor controls.

Key Features

  • High Current Capability: The STB120N4F6 can handle continuous drain currents up to 120A, making it suitable for high-power applications.
  • Low On-Resistance: With an R<sub>DS(on) of only 4.6 mΩ max, this MOSFET ensures high efficiency and low conduction losses.
  • High Switching Performance: The fast switching speed reduces switching losses and improves overall performance in applications requiring frequent on-off cycles.
  • 100% Avalanche Tested: This feature guarantees robustness and reliability, ensuring the MOSFET can withstand stress under repetitive avalanche conditions.
  • STripFET™ VI DeepGATE™ Technology: This advanced technology enhances threshold voltage control, offering excellent intrinsic capacitance and resistance characteristics.

Applications

The STB120N4F6 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Current DC/DC Converters
  • Motor Control Circuits
  • Automotive Applications
  • Power Management Solutions

Package and Environmental Compliance

The STB120N4F6 comes in a D2PAK package, which is known for its ability to handle high thermal and electrical loads. The product is also compliant with RoHS (Restriction of Hazardous Substances), reflecting STMicroelectronics' commitment to environmental sustainability.

Conclusion

With its robust design, high current capacity, low on-resistance, and fast switching capabilities, the STB120N4F6 from STMicroelectronics is an excellent choice for designers looking to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7969 $62.8915
80+ $1.4744 $117.9520
125+ $1.4283 $178.5375
170+ $1.3822 $234.9740
220+ $1.3363 $293.9860
290+ $1.1980 $347.4200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,090 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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