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STB12NM50ND

Part No STB12NM50ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 11A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 850pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 010623-STB12NM50ND
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian STB12NM50ND CAD Model

Description

The STB12NM50ND is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, a global leader in semiconductor solutions. This MOSFET is designed to meet the stringent requirements of modern electronic applications, offering high efficiency, reliability, and performance.

Key Features

  • Device Type: N-Channel MOSFET
  • Technology: MDmesh™ II Plus low Qg
  • Voltage Rating: 500V, providing ample headroom for high voltage applications.
  • Current Rating: 11A continuous, ensuring it can handle significant power loads.
  • RDS(on): 0.35 ohm typ., offering low on-resistance for higher efficiency.
  • Package: D2PAK, a surface mount package that is suitable for compact PCB layouts.

Applications

The STB12NM50ND is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC/DC converters
  • LED lighting solutions
  • Motor control circuits
  • Power management functions

Performance and Efficiency

The device is engineered to provide exceptional performance with its fast switching capabilities and low gate charge (Qg), which minimizes energy loss during switching events. The MDmesh™ II Plus technology enhances the overall efficiency, making the STB12NM50ND an excellent choice for power supply designers looking to optimize energy consumption.

Reliability and Durability

STMicroelectronics is known for its commitment to quality, and the STB12NM50ND is no exception. It is designed to withstand harsh conditions and provide stable performance over its lifetime. The robust construction ensures that the MOSFET can handle high surge currents without degradation, making it a reliable component for critical applications.

Environmental and Safety Compliance

The STB12NM50ND is compliant with RoHS and Halogen-free, ensuring that it meets current environmental standards for electronic components. This compliance reflects STMicroelectronics' dedication to environmental responsibility and the safety of their products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1053 $53.3689
30+ $3.3685 $101.0550
46+ $3.2632 $150.1072
64+ $3.1579 $202.1056
82+ $3.0527 $250.3214
110+ $2.7369 $301.0590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,977 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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