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STB150NF55T4

Part No STB150NF55T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 190nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031068-STB150NF55T4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB150NF55T4 CAD Model

Description

STB150NF55T4 - STMicroelectronics

The STB150NF55T4 is a cutting-edge power MOSFET device engineered by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This product is designed to cater to demanding power applications that require low on-resistance, high switching speeds, and superior thermal performance.

Key Features

  • Low On-Resistance: The STB150NF55T4 boasts an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses. This feature makes it an ideal choice for high-efficiency power management applications.
  • High Current Capability: With its ability to handle a continuous drain current (I<sub>D) of up to 120A, this MOSFET can easily accommodate applications with high current demands, ensuring reliable operation under strenuous conditions.
  • Enhanced Switching Performance: The device is optimized for fast switching, which is crucial for reducing switching losses and improving performance in high-frequency power conversion systems.
  • 100% Avalanche Tested: Ensuring robustness and reliability, each unit is rigorously tested for avalanche energy capability, providing an extra layer of protection against unexpected voltage spikes.
  • Low Gate Charge: The STB150NF55T4 is designed with a low gate charge (Q<sub>g), which reduces the power required to turn the MOSFET on and off, thus improving the overall efficiency of the system.

Applications

The versatility of the STB150NF55T4 allows it to be used in a wide array of applications. It is particularly well-suited for:

  • Switching applications in power supply units
  • DC-DC converters
  • Motor drives and inverters
  • Automotive applications
  • High-performance computing systems

Package and Quality

The STB150NF55T4 is housed in a D2PAK package, which is known for its compact size and excellent thermal characteristics. The device meets stringent quality standards, ensuring a reliable performance even in harsh environmental conditions.

With its impressive combination of features, the STB150NF55T4 from STMicroelectronics stands out as a top choice for engineers and designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1958 $60.7202
45+ $2.6222 $117.9990
69+ $2.5403 $175.2807
94+ $2.4583 $231.0802
122+ $2.3765 $289.9330
163+ $2.1305 $347.2715
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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