STB180N55F3 - N-channel 55 V, 4.6 mΩ typ., 120 A STripFET™ F3 Power MOSFET in D2PAK package

The STB180N55F3 is a high performance N-channel Power MOSFET produced using STMicroelectronics' advanced STripFET™ F3 technology. This device is designed to meet a wide range of applications thanks to its exceptional on-state resistance (R<sub>DS(on)) and superior switching performance. The STB180N55F3 is a perfect choice for high efficiency solutions where power density and reliability are critical.

Key Features

• Low Threshold Voltage (V<sub>GS(th)): The low gate threshold voltage allows for efficient operation at low voltages, making it suitable for low voltage applications.
• Low On-Resistance (R<sub>DS(on)): With a typical on-resistance of just 4.6 mΩ, the STB180N55F3 provides excellent conduction efficiency, reducing power losses and improving overall system efficiency.
• High Current Capability: The device can handle continuous drain currents up to 120 A, making it ideal for high current applications.
• 100% Avalanche Tested: Ensures robust performance and reliability even in harsh conditions.
• Low Gate Charge (Q<sub>g): The MOSFET features a low gate charge, which enhances the switching performance and reduces switching losses.

Applications

• Switching applications
• Power supplies
• Motor control
• Automotive applications
• DC-DC and AC-DC converters

Package Details

The STB180N55F3 comes in a surface-mount D2PAK package, which is suitable for compact designs and offers good thermal performance. The package is designed to handle high current and power levels while maintaining a low profile, making it a versatile choice for space-constrained applications.

With its combination of low conduction losses, high current capability, and robustness, the STB180N55F3 from STMicroelectronics is a powerful component that enhances the efficiency and performance of a wide range of electronic systems.