STB18NM80 - N-Channel MOSFET by STMicroelectronics
The STB18NM80 is a robust and efficient N-channel power MOSFET designed and manufactured by STMicroelectronics, one of the leading names in semiconductor solutions. This MOSFET is part of the MDmesh™ series, which is known for its excellent on-state resistance (R<sub>DS(on)) and reduced switching losses, making it an ideal choice for high-efficiency power conversion applications.
Key Features:
- High Voltage Capability: The STB18NM80 operates at a maximum drain-source voltage (V<sub>DS) of 800V, which makes it suitable for high voltage applications.
- Low On-Resistance: With an R<sub>DS(on) value as low as 0.18 ohm, this MOSFET ensures minimal power loss during operation, enhancing the overall efficiency of the system.
- High Current Rating: It can handle continuous drain currents (I<sub>D) up to 18A, making it capable of driving high current loads.
- MDmesh™ Technology: Incorporates STMicroelectronics' innovative MDmesh™ technology, providing low gate charge (Q<sub>g), reduced threshold voltage, and excellent dv/dt capability.
- Improved Switching Performance: Optimized for fast switching applications, the STB18NM80 reduces switching losses which is beneficial for power converters and inverters.
- Robustness: The device is designed to withstand harsh operating conditions and is characterized by its high ruggedness.
- TO-220 Package: Encapsulated in a TO-220 package, the STB18NM80 offers a balance between performance and size, making it suitable for a wide range of applications.
Applications:
The STB18NM80 is versatile and can be used in a variety of applications, including:
- Switch Mode Power Supplies (SMPS)
- High-efficiency DC/DC converters
- Power factor correction circuits
- Lighting applications
- Motor control circuits
- Other power management functions
With its combination of high voltage capability, low on-resistance, and fast switching performance, the STB18NM80 from STMicroelectronics is an excellent choice for designers looking to improve power density and efficiency in their power management systems.
