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STB200NF04-1

Part No STB200NF04-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 5100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 212256-STB200NF04-1
Family Name STB200NF04-1
Introduction Date December 10, 2003
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB200NF04-1 CAD Model

Description

STB200NF04-1 - N-Channel MOSFET by STMicroelectronics

The STB200NF04-1 is a high-performance N-Channel MOSFET designed and manufactured by STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is specifically engineered to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and high-speed switching circuits.

Key Features:

  • Low On-Resistance: The STB200NF04-1 boasts an extremely low on-resistance (R<sub>DS(on)) which translates to reduced conduction losses and improved overall efficiency in applications where it is deployed.
  • High Current Capability: This device is capable of handling high continuous drain currents, making it suitable for demanding power applications that require robust current handling capabilities.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness in applications that may experience difficult conditions such as voltage spikes or surges.
  • Low Gate Charge: The MOSFET features a low gate charge (Q<sub>G), which facilitates faster switching speeds and reduces switching losses, a critical factor in high-frequency power conversion systems.
  • Improved dv/dt Capability: The device is designed to handle high dv/dt rates, offering better performance in fast-switching applications and providing an additional layer of protection against voltage transients.

Applications:

The versatility of the STB200NF04-1 makes it an ideal choice for a variety of applications, including:

  • High-efficiency DC/DC converters
  • Switch-mode power supplies (SMPS)
  • Power management systems
  • Motor control circuits
  • Automotive and industrial applications

Package and Quality:

The STB200NF04-1 comes in a robust and compact D2PAK package, which is well-suited for applications with limited space that require high thermal performance. STMicroelectronics' commitment to quality ensures that each MOSFET meets the highest standards, providing designers with a reliable and efficient power switching solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5729 $60.1545
250+ $0.4701 $117.5250
385+ $0.4551 $175.2135
525+ $0.4401 $231.0525
680+ $0.4262 $289.8160
910+ $0.3823 $347.8930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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