STB20N90K5 - N-channel 900 V, 0.165 Ohm typ., 20 A MDmesh™ K5 Power MOSFET in D2PAK package

The STB20N90K5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This device is part of the MDmesh™ K5 series, which integrates a fifth generation of ST's proprietary super-junction technology, setting new standards in energy efficiency, thermal performance, and switching behavior.

Key Features

• High Voltage Capability: The STB20N90K5 is designed to handle a drain-source voltage (V<sub>DS) up to 900 V, making it suitable for high voltage applications.
• Low On-Resistance: Featuring an on-resistance (R<sub>DS(on)) of only 0.165 Ohm typical, this MOSFET ensures reduced conduction losses and enhances overall efficiency.
• High Current Rating: With a continuous drain current (I<sub>D) of 20 A, this device can manage significant power, suitable for a variety of demanding applications.
• Enhanced Switching Performance: The fast switching characteristics are a result of the optimized capacitance profile, leading to reduced switching losses.
• Robust Body Diode: The MOSFET features a highly robust and efficient intrinsic body diode, which is an asset in hard-switching applications.

Applications

The STB20N90K5 is versatile and can be used in a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• Welding Equipment
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• High-Performance Drives

Package Information

The device is housed in a D2PAK package, known for its compact footprint and ability to handle high thermal and electrical loads. This package is well-suited for use in space-constrained applications while providing excellent power density.

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STB20N90K5 is no exception, as it is manufactured with state-of-the-art processes and subjected to rigorous testing to ensure performance and durability in the field.