The STB24N65M2 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET designed with the company's advanced MDmesh™ M2 technology. This technology combines excellent RDS(on) performance with a high-quality level of ruggedness, making the STB24N65M2 an ideal choice for high-efficiency solutions in a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other energy-related systems.

Key Features:

• High Voltage Capability: The MOSFET operates at a drain-source voltage of 650 V, which is suitable for high-voltage applications.
• Low On-Resistance: With a typical on-resistance (RDS(on)) of only 0.190 Ohm, it ensures reduced conduction losses and enhances overall efficiency.
• High Current Rating: The device can handle continuous drain current up to 17 A, making it capable of powering demanding loads.
• Reduced Gate Charge: The optimized gate charge (Qg) allows for faster switching performance, which is critical in power conversion applications.
• Robust Design: The MOSFET features a 100% avalanche tested design, ensuring reliability and durability even under extreme conditions.
• Package: Available in the surface-mount D2PAK package, it provides a compact footprint and is suitable for automated assembly processes.

Applications:

• Switch-mode power supplies (SMPS)
• LED lighting applications
• Welding equipment
• Solar inverters
• Power converters and inverters
• Motor control applications

The STB24N65M2 is part of a larger family of MDmesh™ M2 Power MOSFETs that are recognized for their efficiency and performance. By choosing this component, designers can ensure high power density and reliability in their applications while benefiting from the quality and support of STMicroelectronics, a global leader in semiconductor solutions.