The STB30NM50N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This device is part of the MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and high power density. It is specifically designed to address the rigorous demands of today's power electronic applications, including switched-mode power supplies, lighting, DC-AC inverters, and motor control systems.

Key Features

• High Voltage Capability: With a drain-source voltage of 500 V, the STB30NM50N is engineered to handle high voltage applications with ease.
• Low On-Resistance: A typical on-resistance of just 0.097 ohm minimizes conduction losses and enhances overall efficiency.
• High Current Rating: This MOSFET can support a continuous drain current of 26 A, making it suitable for high current operations.
• Fast Switching Speed: The device is optimized for fast switching, reducing switching losses and improving performance in high-frequency circuits.
• 100% Avalanche Tested: Ensures reliability and robustness in real-world applications.
• Low Gate Charge: Designed with a low gate charge to facilitate faster switching and reduce driver power consumption.

Applications

The versatility of the STB30NM50N allows it to be utilized in a wide array of applications:

• Switched Mode Power Supplies (SMPS)
• LED Lighting Solutions
• High-Efficiency DC-AC Inverters
• Motor Control Units
• Power Management Systems

Package Details

The STB30NM50N comes in a robust and compact D2PAK package, providing excellent thermal performance and making it suitable for space-constrained applications. The D2PAK package is also known for its ease of mounting and solderability, which simplifies the manufacturing process.

With its advanced technology and superior performance characteristics, the STB30NM50N from STMicroelectronics is an ideal choice for designers looking to improve the efficiency, reliability, and cost-effectiveness of their power electronic systems.