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STB4NK60Z-1

Part No STB4NK60Z-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 066283-STB4NK60Z-1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB4NK60Z-1 CAD Model

Description

STB4NK60Z-1 - N-channel 600V - 1.0Ω - 3A TO-220/TO-220FP/D²PAK Zener-protected SuperMESH™ Power MOSFET

The STB4NK60Z-1 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, renowned for its innovative semiconductor solutions. This device is part of the SuperMESH™ series, which is characterized by extremely high dv/dt capability, gate charge minimization, and Zener protection, making it an ideal choice for a wide range of high-efficiency applications.

Operating at a 600V breakdown voltage, the STB4NK60Z-1 ensures robust performance for high-voltage applications. With an on-resistance of merely 1.0Ω, this MOSFET achieves high conduction efficiency, which is crucial for reducing power losses and improving overall system efficiency. The device is capable of delivering a continuous current of 3A, making it suitable for handling moderate power loads.

The STB4NK60Z-1 comes in multiple package options including TO-220, TO-220FP, and D²PAK, offering flexibility in design for various PCB layouts and thermal performance requirements. Its Zener-protected gate helps to withstand high dv/dt events and offers protection against gate oxide stress, ensuring long-term reliability and stability in operation.

Key features of the STB4NK60Z-1 include:

  • High dv/dt and avalanche capabilities
  • Low gate charge and reduced capacitance
  • 100% avalanche tested for guaranteed reliability
  • Zener-protected gate for enhanced ruggedness

Applications for the STB4NK60Z-1 are diverse and include Switch Mode Power Supplies (SMPS), high-efficiency DC-DC converters, Power Factor Correction (PFC) circuits, and electronic lamp ballasts among others. Its robustness and efficiency also make it a suitable choice for industrial and consumer electronic devices that require high-voltage switching with minimal power losses.

STMicroelectronics' commitment to environmental sustainability is reflected in the STB4NK60Z-1, which is compliant with RoHS and Halogen-Free standards, ensuring an eco-friendly approach to electronics design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0949 $60.2195
130+ $0.8984 $116.7920
200+ $0.8703 $174.0600
275+ $0.8422 $231.6050
355+ $0.8142 $289.0410
475+ $0.7300 $346.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,300 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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