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STB50NE10

Part No STB50NE10
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 50A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 166nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 25A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 066284-STB50NE10
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB50NE10 CAD Model

Description

STB50NE10 - N-Channel 100V - 0.022Ω - 50A - D2PAK STripFET™ II Power MOSFET

The STB50NE10 is a high-performance N-Channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the STripFET™ II series, which is renowned for its low on-resistance and high switching performance. The device is encapsulated in a D2PAK package, which is known for its robustness and ability to handle high current and power levels.

With a drain-source voltage (V<sub>DS) of 100V, the STB50NE10 is suitable for a wide range of applications, including high-efficiency power supplies, DC-DC converters, motor control, and other power management tasks. Its low on-resistance of just 0.022Ω minimizes conduction losses, making it an excellent choice for applications where efficiency is critical.

The STB50NE10 can handle continuous drain currents (I<sub>D) up to 50A, making it capable of driving high current loads with ease. This feature, combined with its 100V rating, allows for the handling of high power levels, which is essential for demanding applications. The device also features a fast switching speed, which is crucial for reducing switching losses and improving overall performance in high-frequency circuits.

Another notable feature of the STB50NE10 is its gate charge (Q<sub>g), which is optimized to achieve a good balance between switching and conduction losses. The MOSFET also includes an integrated diode, which provides body-drain diode reverse recovery time (t<sub>rr), further enhancing its performance in fast-switching applications.

The STB50NE10 is designed with reliability in mind. Its robust package and high-quality silicon technology ensure that it can withstand harsh operating conditions and provide a long operational lifespan. Additionally, it is compliant with the RoHS directive, making it an environmentally friendly choice for electronic designs.

In summary, the STB50NE10 from STMicroelectronics is a powerful and efficient solution for a variety of power management applications. Its low on-resistance, high current handling capability, and fast switching performance, all packed in a robust D2PAK package, make it a top choice for designers seeking to optimize their power circuitry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3433 $58.5825
61+ $1.9228 $117.2908
94+ $1.8627 $175.0938
129+ $1.8026 $232.5354
166+ $1.7424 $289.2384
222+ $1.5623 $346.8306
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 360 pieces
In Stock: 180 pieces Factory Stock: 180 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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